UTT24P10-H

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R210-055.A



ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-100

V

Gate-Source Voltage

VGSS

±25

V

TC=25°С

-24

A

Continuous Drain Current

Continuous

TC=100°С

ID

-15.1

A

Pulsed Drain Current

Pulsed (Note 2)

IDM

-96

A

Power Dissipation

PD

125

W

Junction Temperature

TJ

+150

°C

Storage Temperature Range

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

62

°С/W

Junction to Case

θJC

1.0

°С/W



ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250µA

-100

V

VDS=-100V, VGS=0V, TJ=25°C

-1

µA

Drain-Source Leakage Current

IDSS

VDS=-80V, VGS=0V, TJ=125°C

-10

µA

Forward

VDS=0V ,VGS=+25V

+100

nA

Gate-Source Leakage Current

Reverse

IGSS

VDS=0V ,VGS=-25V

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250µA

-1.2

-1.6

-2.2

V

VGS=-10V, ID=-6.0A

75

95

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=-4.5V, ID=-3.0A

80

110

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

2250 3900

pF

Output Capacitance

COSS

130

250

pF

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=-30V, f=1.0MHz

90

180

pF

SWITCHING PARAMETERS

Total Gate Charge (Note 1)

QG

40.4

70

nC

Gate to Source Charge

QGS

7.7

15

nC

Gate to Drain Charge

QGD

VDS=-50V, VGS=-10V, ID=-6A

6.6

13

nC

Turn-on Delay Time (Note 1)

tD(ON)

27

54

ns

Rise Time

tR

12

24

ns

Turn-off Delay Time

tD(OFF)

150

300

ns

Fall-Time

tF

VDD=-30V, VGS=-10V, ID=-1A,

RG=6Ω

45

90

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Pulsed Current

IS

-24

A

Drain-Source Diode Forward Voltage (Note 1)

ISM

VG=VD=0V , Force Current

-48

A

Maximum Body-Diode Continuous Current

VSD

IS =-1.0A, VGS=0V

-1.2

V

Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.