IXYS reserves the right to change limits, test conditions, and dimensions.

IXGP 16N60C2 IXGA 16N60C2D1

IXGA 16N60C2 IXGA 16N60C2D1

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

Reverse Diode (FRED)

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

V

F

I

2.66

V

T

1.66

I

RM

I

2.5

A

t

rr

V

110

ns

t

rr

I

30

ns

R

thJC

2.5 K/W

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= 12A; V

8

12

S

Note 2.

C

ies

V

720

pF

C

oes

16N60C2

55

pF

16N60C2D1

65

pF

C

res

19

pF

Q

g

I

32

nC

Q

ge

6nC

Q

gc

10

nC

t

d(on)

25

ns

t

ri

15

ns

t

d(off)

60

120

ns

t

fi

35

ns

E

off

60

100

µJ

t

d(on)

25

ns

t

ri

18

ns

E

on

16N60C2D1

0.38

mJ

t

d(off)

120

ns

t

fi

70

ns

E

off

150

µJ

R

thJC

0.83 K/W

R

thCK

(IXGP)

0.5

K/W

Inductive load, T

°°°°C

I

V

Note 1

Inductive load, T

°°°°C

I

V

Note 1.

Notes:

1. Switching times may increase for V

or increased R

2. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

Pins: 1 - Gate

2 - Collector

3 - Emitter

4 - Collector

TO-220 Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

A1

2.03

2.79

.080

.110

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.46

0.74

.018

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

7.11

8.13

.280

.320

E

9.65

10.29

.380

.405

E1

6.86

8.13

.270

.320

e

2.54

BSC

.100

BSC

L

14.61

15.88

.575

.625

L1

2.29

2.79

.090

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.38

0

.015

TO-263 Outline

=