GS66508B

Bottom-side cooled 650 V E-mode GaN transistor

Datasheet

Rev 200402

© 2009-2020 GaN Systems Inc.

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Absolute Maximum Ratings (Tcase = 25 °C except as noted)

Parameter

Symbol

Value

Unit

Operating Junction Temperature

TJ

-55 to +150

°C

Storage Temperature Range

TS

-55 to +150

°C

Drain-to-Source Voltage

VDS

650

V

Drain-to-Source Voltage - transient (Note 1)

VDS(transient)

750

V

Gate-to-Source Voltage

VGS

-10 to +7

V

Gate-to-Source Voltage - transient (Note 1)

VGS(transient)

-20 to +10

V

Continuous Drain Current (Tcase = 25 °C)

IDS

30

A

Continuous Drain Current (Tcase = 100 °C)

IDS

25

A

Pulse Drain Current (Pulse width 50 µs, VGS = 6 V) (Note 2)

IDS Pulse

60

A

(1) For < 1

µs

(2) Defined by product design and characterization. Value is not tested to full current in production.

Thermal Characteristics (Typical values unless otherwise noted)

Parameter

Symbol

Value

Units

Thermal Resistance (junction-to-case) – bottom side

RΘJC

0.5

°C /W

Thermal Resistance (junction-to-ambient) (Note 3)

RΘJA

24

°C /W

Maximum Soldering Temperature (MSL3 rated)

TSOLD

260

°C

(3) Device mounted on 1.6 mm PCB thickness FR4, 4-layer PCB with 2 oz. copper on each layer. The recommendation for

thermal vias under the thermal pad are 0.3 mm diameter (12 mil) with 0.635 mm pitch (25 mil). The copper layers

under the thermal pad and drain pad are 25 x 25 mm2 each. The PCB is mounted in horizontal position without air

stream cooling.

Ordering Information

Ordering

code

Package type

Packing

method

Qty

Reel

Diameter

Reel

Width

GS66508B-TR

GaNPX® Bottom-Side Cooled

Tape-and-Reel

3000

13” (330mm)

16mm

GS66508B-MR

GaNPX® Bottom-Side Cooled

Mini-Reel

250

7” (180mm)

16mm