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Giải thích chi tiết về linh kiện  50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ
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nhà sản xuất  NEXPERIA [Nexperia B.V. All rights reserved]
Trang chủ  https://www.nexperia.com/
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PIMP32X bảng dữ liệu(HTML) 3 Page - Nexperia B.V. All rights reserved

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Nexperia
PIMP32
50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ
Tamb (°C)
- 75
175
125
25
75
- 25
006aab531
200
300
100
400
500
Ptot
(mW)
0
FR4 PCB, single-sided, 35 µm copper, tin-plated and standard footprint
Fig. 1. Per device: Power derating curve
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
-
-
432
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
-
-
105
K/W
Per device
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
-
-
298
K/W
[1] Device mounted on an FR4 PCB, single-sided, 35 µm copper, tin-plated and standard footprint.
006aaa494
10- 5
10
10- 2
10- 4
102
10- 1
tp (s)
10- 3
103
1
102
10
103
Zth(j-a)
(K/W)
1
0.10
0.05
0.02
0.01
0
δ = 1
0.75
0.50
0.33
0.20
FR4 PCB, single-sided, 35µm copper, tin-plated and standard footprint
Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PIMP32
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2022. All rights reserved
Product data sheet
16 February 2022
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