PIMC31_1

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 01 — 24 March 2009

3 of 13

NXP Semiconductors

PIMC31

500 mA, 50 V NPN/PNP double RET; R1 = 1 k

Ω, R2 = 10 kΩ

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

IO

output current

-

500

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -

290

mW

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -

420

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−55

+150

°C

Tstg

storage temperature

−65

+150

°C

FR4 PCB, standard footprint

Fig 1.

Power derating curve

Table 5.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Tamb (°C)

−75

175

125

25

75

−25

006aab531

200

300

100

400

500

Ptot

(mW)

0

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

-

431

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

-

-

105

K/W

Per device

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

-

298

K/W