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Giải thích chi tiết về linh kiện  NPN/NPN general purpose double transistor
PDF  7 Pages
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PEMX1 bảng dữ liệu(HTML) 2 Page - Nexperia B.V. All rights reserved

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Nexperia
PEMX1
NPN/NPN general purpose double transistor
6. Ordering information
Table 3. Ordering information
Package
Type number
Name
Description
Version
PEMX1
SOT666
plastic, surface-mounted package; 6 leads; 0.5 mm pitch;
1.6 mm x 1.2 mm x 0.55 mm body
SOT666
7. Marking
Table 4. Marking codes
Type number
Marking code
PEMX1
ZZ
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VCBO
collector-base voltage
open emitter
-
50
V
VCEO
collector-emitter voltage open base
-
40
V
VEBO
emitter-base voltage
open collector
-
5
V
IC
collector current
-
100
mA
ICM
peak collector current
-
200
mA
IBM
peak base current
-
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
200
mW
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
300
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-65
150
°C
Tstg
storage temperature
-65
150
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1] [2] -
-
416
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
PEMX1
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2022. All rights reserved
Product data sheet
29 December 2022
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