200 V

TO

LOAD

V

CC

COM

LIN

HIN

V

S

V

B

HO

HIN

COM

V

CC

LIN

LO

1

8

4

5

Features

• Floating channel designed for bootstrap operation

• Fully operational up to +200 V

• Tolerant to negative transient voltage, dV/dt immune

• Gate drive supply range from 10 V to 20 V

• Independent low-side and high-side channels

• Input logic HIN/LIN active high

• Undervoltage lockout for both channels

• 3.3 V and 5 V input logic compatible

• CMOS Schmitt-triggered inputs with pull-down

• Matched propagation delay for both channels

Packages

HIGH AND LOW SIDE DRIVER

Product Summary

200 V max.

1.0 A /1.0 A typ.

10 V - 20 V

60 ns typ.

Delay Matching

20 ns max.

IRS2011(S)PbF

www.irf.com

1

Typical Connection

(Refer to Lead Assignments for correct configuration). This diagram shows electrical connections only.

Please refer to our Application Notes and DesignTips for proper circuit board layout.

Data Sheet No.PD60221

Applications

• Audio Class D amplifiers

• High power DC-DC SMPS converters

• DC motor drive

Description

The IRS2011 is a high power, high speed power MOSFET

driver with independent high and low-side referenced output

channels, ideal for Audio Class D and DC-DC converter appli-

cations. Logic inputs are compatible with standard CMOS or

LSTTL output, down to 3.3 V logic. The output drivers feature a

high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are

matched to simplify use in high frequency applications. The floating channel can be used to drive an N-

channel power MOSFET in the high-side configuration which operates up to 200 V. Proprietary HVIC and

latch immune CMOS technologies enable ruggedized monolithic construction.

IRS2011S

8-Lead SOIC

IRS2011

8-Lead PDIP

• RoHS compliant