Rev. 04, 2022-12-20

© 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc.

The information in this document is subject to change without notice.

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PXAE213708NB

Package Type: PG-HB2SOF-8-1

Features

• Broadband internal input and output matching

• Asymmetrical Doherty design

- Main: P3dB = 160 W Typ

- Peak: P3dB = 290 W Typ

• Typical Pulsed CW performance, 2200 MHz, 28 V,

doherty configuration, 10 µs, 10% duty cycle, class

AB

- Output power at P3dB = 400 W

- Efficiency = 60%

- Gain = 13.3 dB

• Capable of handling 10:1 VSWR @ 28 V, 54 W (1C

WCDMA) output power

• Human Body Model Class 2 (per ANSI/ESDA/JEDEC

JS-001)

• Integrated ESD protection

• Low thermal resistance

• Pb-free and RoHS compliant

Thermally-Enhanced High Power RF LDMOS FET

400 W, 48 V, 2110 – 2200 MHz

Description

The PXAE213708NB is a 400-watt (P3dB) LDMOS Doherty transistor

intended for use in multi-standard cellular power amplifier

applications in the 2110 to 2200 MHz frequency band. Features

include input and output matching, high gain and thermally-

enhanced package with earless flange. Manufactured with

Wolfspeed’s advanced LDMOS process, this device provides

excellent thermal performance and superior reliability.

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test circuit)

VDD = 28 V, IDQ = 700 mA, POUT = 54 W avg, VGS(PEAK) = 1.5 V, ƒ = 2200 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10

dB @ 0.01% CCDF

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Gain

Gps

15

16

—

dB

Drain Efficiency

hD

48.5

52

—

%

Adjacent Channel Power Ratio

ACPR

—

–28

–25

dBc

Output PAR @ 0.01% CCDF

OPAR

7.5

8

—

dB

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 28 V, IDQ= 760 mA, ƒ = 2200 MHz,

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

pxae213708nb_g1