PTRA083818NF-V1-R5 datasheet(1/10 Pages) WOLFSPEED

tên linh kiện	PTRA083818NF-V1-R5

Giải thích chi tiết về linh kiện	Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 – 805 MHz

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Rev. 06.2, 2022-1-27

The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

PTRA083818NF

Package Types: PG-HBSOF-6-2

Features

• Broadband internal input matching

• Asymmetrical Doherty design

- Main : P

1dB = 165 W Typ

- Peak : P

1dB = 250 W Typ

• Typical Pulsed CW performance, 805 MHz, 48 V,

combined outputs

- Output power at P

1dB = 275 W

- Efficiency = 59.6%

- Gain = 18.6 dB

• Capable of handling 10:1 VSWR @ 48 V, 81.3 W

CW output power

• Integrated ESD protection

• Human Body Model class 1C (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

Thermally-Enhanced High Power RF LDMOS FET

275 W, 48 V, 733 – 805 MHz

Description

The PTRA083818NF is a 275-watt LDMOS FET intended for use in multi-standard

cellular power amplifier applications in the 733 to 805 MHz frequency band. Features

include input matching, high gain and thermally-enhanced package with earless

flanges. Manufactured with Wolfspeed’s advanced LDMOS process, this device

provides excellent thermal performance and superior reliability.

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture)

V

DD = 48 V, IDQ = 200 mA, VGS(PEAK) = 2.0 V, POUT = 81.3 W avg, ƒ = 805 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Linear Gain

G

ps

17.2

18

—

dB

Drain Efficiency

h

D

53

56

—

%

Adjacent Channel Power Ratio

ACPR

—

–27.3

–24

dBc

Output PAR @ 0.01% CCDF

OPAR

5.5

6.3

—

dB

Note:

All published data at T

CASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ(MAIN) = 200 mA,

VGS(PEAK) = 2.0 V, ƒ = 805 MHz,

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

ptra083818nf_g1

Số phần tương tự - PTRA083818NF-V1-R5

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Infineon Technologies A...	PTRA083818NF	481Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 ??805 MHz Rev. 05.1, 2017-03-30
Cree, Inc	PTRA083818NF	606Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 ??805 MHz

More results

Mô tả tương tự - PTRA083818NF-V1-R5

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Infineon Technologies A...	PTVA084007NF	491Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ??805 MHz Rev. 03, 2017-08-30
	PTRA083818NF	481Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 ??805 MHz Rev. 05.1, 2017-03-30
	PTRA093818NF	470Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz Rev. 05.1, 2017-08-16
Cree, Inc	PTVA082407NF	639Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz
	PTVA084007NF	486Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ??805 MHz
	PTRA083818NF	606Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 ??805 MHz
	PTRA084808NF	649Kb / 12P	Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 ??821 MHz
	PTRA087008NB	660Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 ??805 MHz
WOLFSPEED, INC.	PTRA087008NB	731Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz Rev. 03.4, 2022-02-13
WOLFSPEED, INC.	PTVA084007NF	497Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 – 805 MHz Rev. 04.2, 2022-02-13

More results

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PTRA083818NF-V1-R5 bảng dữ liệu(HTML) 1 Page - WOLFSPEED, INC.

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