PTFC270101M-V1-R1K datasheet(1/22 Pages) WOLFSPEED

tên linh kiện	PTFC270101M-V1-R1K

Giải thích chi tiết về linh kiện	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz

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4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 0

7, 2023-06-28

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

PTFC270101M

Package PG-SON-10

High Power RF LDMOS Field Effect Transistor

10 W, 28 V, 900 – 2700 MHz

Features

• Unmatched input and output

• Typical CW performance, 2170 MHz, 28 V

- Output power @ P1dB = 10 W

- Gain = 20 dB

- Efficiency = 60%

• Typical two-carrier WCDMA performance, 2170 MHz, 28

V, 8 dB PAR

- Output power = 1.3 W avg

- Gain = 21 dB

- Efficiency = 21%

- ACPR = –44.9 dBc @ 5 MHz

• Capable of handling 10:1 VSWR @ 28 V, 10 W (CW)

output power

• Integrated ESD protection

• Pb-free and RoHS compliant

Description

The PTFC270101M is an unmatched 10-watt LDMOS FET suitable

for power amplifier applications with frequencies from 900 MHz to

2700 MHz. This LDMOS transistor offers excellent gain, efficiency

and linearity performance in a small overmolded plastic package.

RF Characteristics

Two-carrier WCDMA Specifications (tested in Wolfspeed production test fixture)

VDD = 28 V, IDQ = 120 mA, POUT = 2.4 W avg, ƒ = 2170 MHz

3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 dB peak/average @ 0.01% CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

19.5

20.5

—

dB

0

10

20

30

40

50

60

70

16

17

18

19

20

21

22

23

24

26

28

30

32

34

36

38

40

Output Power (dBm)

Two-carrier WCDMA Drive-up

VDD = 28 V, IDQ = 120 mA, ƒ = 2170 MHz,

3GPP WCDMA signal, 8 dB PAR,

10 MHz carrier spacing, 3.84 MHz bandwidth

Gain

Efficiency

c270101m-2.1-gr1c

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Infineon Technologies A...	PTFC270101M	409Kb / 21P	High Power RF LDMOS Field Effect Transistor Rev. 04, 2015-04-01
Infineon Technologies A...	PTFC270101M	410Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26
Cree, Inc	PTFC270101M	970Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz
Infineon Technologies A...	PTFC270101MV1R1K	410Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26
Infineon Technologies A...	PTFC270101MV1R1KXUMA1	410Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26

More results

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Infineon Technologies A...	PXAC243502FV	1Mb / 10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PTFC270101M	410Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26
	PTFC270051M	293Kb / 14P	High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz Rev. 01.1, 2016-07-26
	PTFA220121M	381Kb / 21P	High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz Rev. 10, 2015-10-23
	PTFA220041M	331Kb / 18P	High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz Rev. 10.1, 2016-06-01
Cree, Inc	PXAC243502FV	543Kb / 10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
	PTFC270051M	745Kb / 14P	High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz
	PTFC270101M	970Kb / 22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz
	PTFA220121M	955Kb / 21P	High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz
	PTFB201402FC	595Kb / 14P	High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz

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PTFC270101M-V1-R1K bảng dữ liệu(HTML) 1 Page - WOLFSPEED, INC.

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