GTRA360502M-V1-R3K datasheet(1/9 Pages) WOLFSPEED

tên linh kiện	GTRA360502M-V1-R3K

Giải thích chi tiết về linh kiện	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz

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4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 04, 2023-06-27

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

GTRA360502M

Package PG-DFN-6.5x7-1

Description

The GTRA360502M houses two GaN-on-SiC power transistor for use in

asymmetric Doherty power ampliﬁers. The device has been designed

for use in communications infrastructure applications from 3,400 MHz to

3,800 MHz. It operates from a supply voltage of up to 50 volts and delivers

a maximum, average output power of 8 watts.

Features

• GaN on SiC HEMT technology

• Asymmetrical Doherty design

- Main: P3dB = 20 W Typ

- Peak: P3dB = 36 W Typ

• Typical pulsed CW performance, 3600 MHz, 48 V, 10 μs

bandwidth, 10% duty cycle (Doherty configuration)

- Output power at P3dB = 50 W

- Drain efficiency = 62% @ 50 W

• Human Body Model Class 1A (per ANSI/ESDA/JEDEC

JS-001)

• Pb-free and RoHS compliant

• Low thermal resistance

GTRA360502M

Thermally-Enhanced High Power RF GaN on SiC HEMT

50 W, 48 V, 3400 – 3800 MHz

0

10

20

30

40

50

60

3

6

9

12

15

18

21

18

23

28

33

38

43

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48V, IDQ = 25 mA, VGS(PEAK) = –4.9 V,

= 3600 MHz

3GPP WCDMA signal

10 dB PAR, 3.84 MHz bandwidth

Gain

Efficiency

PAR @ 0.01% CCDF

g360502m-gr1a

RF Characteristics

Typical RF Characteristics (tested in Wolfspeed application circuit)

VDD = 48 V, IDQ = 25 mA, VGS(PEAK) = –4.9 V, channel bandwidth = 3.84 MHz, 10 dB peak/average @ 0.01% CCDF

Freq

Pout

Gain

Eff

PAR

ALT1

–ALT1

ALT2

–ALT2

MHz

W

dB

%

dB

dBc

3400

39.0

14.9

54.1

8.8

–23.3

–23.1

–34.4

–34.2

3500

39.0

15.6

55.2

8.7

–24.5

–24.6

–36.2

3600

39.0

15.6

53.9

8.3

–26.1

–26.2

–37.0

3700

39.0

15.2

55.3

7.9

–29.4

–29.1

–39.1

–38.7

3800

39.0

14.5

50.9

6.9

–32.0

–31.8

–41.0

–40.6

Số phần tương tự - GTRA360502M-V1-R3K

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Cree, Inc	GTRA360502M	250Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT

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Mô tả tương tự - GTRA360502M-V1-R3K

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Cree, Inc	GTRA362002FC	233Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 ??3600 MHz
	GTRA362802FC	282Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 ??3600 MHz
	GTRA364002FC	279Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 ??3600 MHz
	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
	GTRA384802FC	1Mb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz
WOLFSPEED, INC.	GTRA362002FC-V1	435Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz Rev. 06, 2023-06-23
	GTRA362802FC-V1	553Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27
	GTRA384802FC-V1	585Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz Rev. 03.1, 2022-1-27
	GTRA260502M	762Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 2515 – 2675 MHz Rev. 04. 2023-06-26
	GTRA364002FC	511Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27

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