Features

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Ultra Broad Bandwidth: 50 MHz to 50 GHz

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Functional bandwidth : 50 MHz to 70 GHz

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0.8 dB Insertion Loss, 31 dB Isolation at 50 GHz

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Low Current consumption:

-10 mA for Low Loss State

+10 mA for Isolation

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M/A-COM’s unique patent pending AlGaAs

hetero-junction anode technology

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Silicon Nitride Passivation

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Polymide Scratch protection

Description

M/A-COM’s MA4AGSW3 is an Aluminum-Gallium-Arsenide

anode enhanced, SP3T PIN diode switch. AlGaAs anodes, which

utilize M/A-COM’s patent pending hetero-junction technology,

which produce less loss than conventional GaAs processes, as

much as 0.3 dB reduction in insertion loss at 50 GHz.

These

devices are fabricated on a OMCVD epitaxial wafer using a

process designed for high device uniformity and extremely low

parasitics.

The diodes themselves exhibit low series resistance,

low capacitance, and fast switching speed.

They are fully

passivated with silicon nitride and have an additional layer of a

polymer for scratch protection. The protective coating prevents

damage to the junction and the anode airbridges during handling.

Off-chip bias circuitry is required and allows maximum design

flexibility.

Applications

The low capacitance of the PIN diodes used makes it ideal for use

in microwave multi-throw switch designs, where the series

capacitance in each off-arm will load the input.

Also, the low

series resistance of the diodes helps the total insertion loss of the

devices at microwave frequencies. These AlGaAs PIN switches

are used as the switching arrays for radar systems, radiometers, and

other multi-assembly components.

AlGaAs SP3T PIN

Diode Switch

V 1.00

MA4AGSW3 Layout

Absolute Maximum Ratings

1

@ TA = +25 °C (Unless otherwise

specified)

Parameter

Maximum Rating

Operating Temperature

-55 °C to +125 °C

Storage Temperature

-65 °C to +150 °C

Incident C.W. RF Power

+ 23 dBm C. W.

Reverse Voltage

25 V

Bias Current

+/- 30 mA

1. Exceeding any of these values may result in permanent

damage

Nominal Chip Dimensions

Chip Dimensions (

µm)

X

Y

Chip

1380

1410

Pad Dimensions (

µm)

X

Y

RF

100

100

Pad Locations (

µm)

X

Y

J1

0

0

J2

-565

+595

J3

0

+1160

Pad Locations Relative to J1

J4

+565

+595