BST80 datasheet(2/12 Pages) PHILIPS

tên linh kiện	BST80

Giải thích chi tiết về linh kiện	N-channel enhancement mode vertical D-MOS transistor

PDF	12 Pages

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nhà sản xuất	PHILIPS [NXP Semiconductors]

Trang chủ	http://www.nxp.com

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2 / 12 page

1997 Jun 20

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode

vertical D-MOS transistor

BST80

FEATURES

• Low drain-source on-state resistance

• Direct interface to C-MOS, TTL, etc.

• High-speed switching

• No secondary breakdown.

APPLICATIONS

• Thin and thick film circuits

• Relay, high-speed and line transformer drivers.

DESCRIPTION

N-channel enhancement mode vertical D-MOS transistor

in a SOT89 package.

PINNING - SOT89

SYMBOL

DESCRIPTION

source

drain

gate

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM355

Bottom view

Marking code: KM

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VDS

drain-source voltage (DC)

−

VGSO

gate-source voltage (DC)

open drain

−±20

drain current (DC)

−

500

Ptot

total power dissipation

Tamb ≤ 25 °C

−

RDSon

drain-source on-state resistance

ID = 500 mA; VGS =10V

Ω

yfs

forward transfer admittance

ID = 500 mA; VDS =15V

300

−

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