BST50 datasheet(3/8 Pages) PHILIPS

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1999 Apr 26

Philips Semiconductors

Product speciﬁcation

NPN Darlington transistors

BST50; BST51; BST52

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

BST50

−

BST51

−

BST52

−

VCES

collector-emitter voltage

VBE =0

BST50

−

BST51

−

BST52

−

VEBO

emitter-base voltage

open collector

−

collector current (DC)

−

0.5

ICM

peak collector current

−

1.5

base current (DC)

−

100

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

1.3

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

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