BSR52 datasheet(3/7 Pages) PHILIPS

3 / 7 page

2004 Nov 11

Philips Semiconductors

Product speciﬁcation

NPN Darlington transistor

BSR52

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient

note 1

150

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICES

collector-base cut-off current

VBE = 0 V; VCE =80V

−−

IEBO

emitter-base cut-off current

VEB =4V; IC =0 A

−−

hFE

DC current gain

VCE = 10 V; see Fig.2

IC = 150 mA

1000

−−

IC = 500 mA

2000

−−

VCEsat

collector-emitter saturation voltage IC = 0.5 A; IB = 0.5 mA

−−

1.3

IC = 1 A; IB =4mA

−−

1.6

VBEsat

base-emitter saturation voltage

IC = 0.5 A; IB = 0.5 mA

−−

1.9

IC = 1 A; IB =4mA

−−

2.2

transition frequency

VCE =5V; IC = 500 mA;

f = 100 MHz

−

200

−

MHz

Switching times (between 10% and 90% levels); see Fig.3

ton

turn-on time

ICon = 500 mA; IBon = 0.5 mA;

IBoff = −0.5 mA

−−

500

toff

turn-off time

−−

1300

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