C4D30120D datasheet(1/6 Pages) WOLFSPEED

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C4D30120D Rev. E, 09-2016

C4D30120D

Silicon Carbide Schottky Diode

Z-Rec® Rectifier

Features

• 1.2kV Schottky Rectifier

• Zero Reverse Recovery Current

• High-Frequency Operation

• Temperature-Independent Switching

• Extremely Fast Switching

Benefits

• Replace Bipolar with Unipolar Rectifiers

• Essentially No Switching Losses

• Higher Efficiency

• Reduction of Heat Sink Requirements

• Parallel Devices Without Thermal Runaway

Applications

• Switch Mode Power Supplies (SMPS)

• Boost diodes in PFC or DC/DC stages

• Free Wheeling Diodes in Inverter stages

• AC/DC converters

Package

TO-247-3

Maximum Ratings (T

C=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

Test Conditions

Note

V

RRM

Repetitive Peak Reverse Voltage

1200

V

RSM

Surge Peak Reverse Voltage

1300

V

R

DC Peak Reverse Voltage

1200

V

I

F

Continuous Forward Current

(Per Leg/Device)

44/88

21.5/43

15/30

A

T

C=25˚C

T

C=135˚C

T

C=152˚C

Fig. 3

I

FRM

Repetitive Peak Forward Surge Current

68*

44*

A

T

C=25˚C, tP=10 ms, Half Sine Pulse

T

C=110˚C, tP=10 ms, Half Sine Pulse

I

FSM

Non-Repetitive Forward Surge Current

100*

85*

A

T

C=25˚C, tP=10 ms, Half Sine Pulse

T

C=110˚C, tP=10 ms, Half Sine Pulse

Fig. 8

I

F,Max

Non-Repetitive Peak Forward Current

900*

750*

A

T

C=25˚C, tP=10 ms, Pulse

T

C=110˚C, tP=10 ms, Pulse

Fig. 8

P

tot

Power Dissipation (Per Leg/Device)

220/440

95/190

W

T

C=25˚C

T

C=110˚C

Fig. 4

dV/dt

Diode dV/dt ruggedness

200

V/ns

V

R=0-960V

∫i2dt

i2t value

50*

36*

A2s

T

C=25˚C, tP=10 ms

T

C=110˚C, tP=10 ms

T

J

Operating Junction Range

-55 to

+175

˚C

T

stg

Storage Temperature Range

-55 to

+135

˚C

TO-247 Mounting Torque

1

8.8

Nm

lbf-in

M3 Screw

6-32 Screw

*

Per Leg, ** Per Device

Part Number

Package

Marking

C4D30120D

TO-247-3

C4D30120

V

RRM

=

1200 V

I

F (TC=135˚C) =

43A**

Q

c

=

155nC**

Số phần tương tự - C4D30120D

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Cree, Inc	C4D30120D	957Kb / 6P	Silicon Carbide Schottky Diode

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Mô tả tương tự - C4D30120D

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