FETek Technology Corp.

Data and specifications subject to change without notice.

www.fetek.com.tw

Ver : A

FKCS2050

Dual N-Ch Fast Switching MOSFETs

22

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVSSS

Source-Source Breakdown Voltage

VGS=0V , IS=250uA

20

---

---

V

RSS(ON)

Static Source-Source On-State Resistance

VGS=4.5V , IS=1.5A

23

32

36

m



VGS=4.0V , IS=1.5A

25

33

38

VGS=3.7V , IS=1.5A

26

34

41

VGS=3.1V , IS=1.5A

27

36

48

VGS=2.5V , IS=1.5A

31

42

55

VGS(th)

Gate Threshold Voltage

VSS=VGS , IS =250uA

0.5

0.65

1.2

V

ISSS

Zero Gate Voltage Source Current

VSS=20V , VGS=0V

---

---

1

uA

IGSS

Gate-Source Leakage Current

VGS=±8V , VSS=0V

---

---

±10

uA

Gfs

Forward Transconductance

VSS=10V , ID=3.0A

---

5.2

---

S

Qg

Total Gate Charge3

VSS=15V , VGS=4.5V , IS=6A

---

10.4

---

nC

Td(on)

Turn-On Delay Time3

VDD=10V , VGS=4.5V , RG=3.3



IS=3A

---

3.2

---

ns

Tr

Rise Time3

---

9.8

---

Td(off)

Turn-Off Delay Time3

---

31

---

Tf

Fall Time3

---

3.6

---

VFSS

Forward Source-Source Voltage

VGS=0V , IS=1.5A

---

0.72

1.1

V

Note :

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 10us , duty cycle ≦ 1%

3.Guaranteed by design, not subject to production testing.

Electrical Characteristics at TA=25℃

Test circuits are example of measuring FET1 sides

Test Circuit 1 VSSS / ISSS

Test Circuit 2 IGSS(+) / (-)