BSR13 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 15

Philips Semiconductors

Product speciﬁcation

NPN switching transistors

BSR13; BSR14

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

BSR13

IE = 0; VCB =50V

−

IE = 0; VCB =50V; Tj = 150 °C

−

µA

collector cut-off current

BSR14

IE = 0; VCB =60V

−

IE = 0; VCB =60V; Tj = 150 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

BSR13

−

BSR14

−

hFE

DC current gain

IC = 0.1 mA; VCE = 10 V; note 1

−

IC = 1 mA; VCE = 10 V; note 1

−

IC = 10 mA; VCE = 10 V; note 1

−

IC = 150 mA; VCE = 10 V; note 1

100

300

IC = 150 mA; VCE = 1 V; note 1

−

DC current gain

IC = 500 mA; VCE = 10 V; note 1

BSR13

−

BSR14

−

VCEsat

collector-emitter saturation voltage

IC = 150 mA; IB =15mA

BSR13

−

400

BSR14

−

300

collector-emitter saturation voltage

IC = 500 mA; IB =50mA

BSR13

−

1.6

BSR14

−

VBEsat

base-emitter saturation voltage

IC = 150 mA; IB =15mA

BSR13

−

1.3

BSR14

0.6

1.2

base-emitter saturation voltage

IC = 500 mA; IB =50mA

BSR13

−

2.6

BSR14

−

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