BSP255 datasheet(3/10 Pages) PHILIPS

tên linh kiện	BSP255

Giải thích chi tiết về linh kiện	P-channel enhancement mode vertical D-MOS transistor

PDF	10 Pages

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nhà sản xuất	PHILIPS [NXP Semiconductors]

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3 / 10 page

1996 Aug 05

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode

vertical D-MOS transistor

BSP255

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. Ts is the temperature at the soldering point of the drain lead.

2. Pulse width and duty cycle limited by maximum junction temperature.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage (DC)

−−300

VGS

gate-source voltage (DC)

−±20

drain current (DC)

Ts = 100 °C; note 1

−−325

IDM

peak drain current

note 2

−−1.3

Ptot

total power dissipation

Ts = 100 °C

−

Tstg

storage temperature

−65

+150

°C

operating junction temperature

−65

+150

°C

Source-drain diode

source current (DC)

Ts = 100 °C

−−0.5

ISM

peak pulsed source current

note 2

−−2A

Fig.2 Power derating curve.

handbook, halfpage

200

MBH446

100

150

Ptot

(W)

Ts (

oC)

δ = 0.01; TS = 100 °C.

(1) RDSon limitation.

Fig.3 DC SOAR.

handbook, halfpage

MBH445

−1

−10

−1

−10−1

−10−2

−10−3

−102

−103

−10

VDS (V)

t p

δ =

1 ms

100

µs

10 ms

(1)

tp =

µs

(A)

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