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74LVC1G332_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 11 October 2006
7 of 15
NXP Semiconductors
74LVC1G332
Single 3-input OR gate
[1]
Typical values are measured at Tamb =25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2]
tpd is the same as tPLH and tPHL.
[3]
CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi × N+ ∑(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
∑(CL × VCC2 × fo) = sum of outputs.
12. AC waveforms
CPD
power dissipation
capacitance
VI = GND to VCC;
VCC = 3.3 V
[3]
-12-
-
-
pF
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 8.
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min
Typ[1]
Max
Min
Max
Measurement points are given in Table 9.
VOL and VOH are typical output voltage drops that occur with the output load.
Fig 7.
The input A, B and C to output Y propagation delays
001aad936
A, B, C input
Y output
tPLH
tPHL
GND
VI
VM
VM
VOH
VOL
Table 9.
Measurement points
Supply voltage
Input
Output
VCC
VM
VM
1.65 V to 1.95 V
0.5
× VCC
0.5
× VCC
2.3 V to 2.7 V
0.5
× VCC
0.5
× VCC
2.7 V
1.5 V
1.5 V
3.0 V to 3.6 V
1.5 V
1.5 V
4.5 V to 5.5 V
0.5
× VCC
0.5
× VCC



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