April 1995

3

Philips Semiconductors

Product specification

P-channel enhancement mode vertical

D-MOS transistor

BSP204; BSP204A

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Note

1. Device mounted on an epoxy printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead

minimum 10 mm x 10 mm.

THERMAL RESISTANCE

Note

1. Device mounted on an epoxy printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead

minimum 10 mm x 10 mm.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

−V

DS

drain-source voltage

−

200

V

gate-source voltage

−

20

V

−I

D

drain current

DC value

−

250

mA

−I

DM

drain current

peak value

−

600

mA

total power dissipation

−

1W

storage temperature range

−65

150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

VALUE

UNIT

from junction to ambient (note 1)

125

K/W