BSP152 datasheet(2/12 Pages) PHILIPS

tên linh kiện	BSP152

Giải thích chi tiết về linh kiện	N-channel enhancement mode vertical D-MOS transistor

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April 1995

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode vertical

D-MOS transistor

BSP152

FEATURES

• Direct interface to C-MOS, TTL,

etc.

• High-speed switching

• No secondary breakdown.

DESCRIPTION

N-channel enhancement mode

vertical D-MOS transistor in a

SOT223 envelope, intended for use

as a line current interruptor in

telephone sets and for applications in

relay, high-speed and line

transformer drivers.

PINNING - SOT223

DESCRIPTION

gate

drain

source

drain

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source

voltage

−

200

DC drain current

−

550

Ptot

total power

dissipation

up to Tamb = 25 °C −

1.5

±VGSO

gate-source

voltage

open drain

−

RDS(on)

drain-source

on-resistance

ID = 750 mA;

VGS = 10 V

−

2.5

Ω

VGS(off)

gate-source

cut-off voltage

ID = 1 mA;

VDS = VGS

1.5

3.5

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM054

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