1995 Apr 24

2

Philips Semiconductors

Product specification

N-channel enhancement mode

vertical D-MOS transistor

BSP145

FEATURES

• Direct interface to C-MOS, TTL, etc.

• High speed switching

• No secondary breakdown.

APPLICATIONS

• Intended for applications in relay, high speed and line

transformer drivers.

DESCRIPTION

N-channel enhancement mode vertical D-MOS transistor

in a SOT223 plastic SMD package.

PINNING - SOT223

PIN

SYMBOL

DESCRIPTION

1

g

gate

2

d

drain

3

s

source

4

d

drain

CAUTION

The device is supplied in an antistatic package. The

gate-source input must be protected against static

discharge during transport or handling.

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM054

4

12

3

Top view

s

d

g

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

drain-source voltage

−

450

V

gate-source voltage

open drain

−±20

V

gate-source threshold voltage

34V

drain current

−

250

mA

drain-source on-state resistance

10

14

Ω

total power dissipation

−

1.5

W