SS12T3 datasheet(2/5 Pages) ONSEMI

2 / 5 page

NSS12200LT1G

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = −10 mAdc, IB = 0)

V(BR)CEO

−12

−

Vdc

Collector −Base Breakdown Voltage

(IC = −0.1 mAdc, IE = 0)

V(BR)CBO

−12

−

Vdc

Emitter −Base Breakdown Voltage

(IE = −0.1 mAdc, IC = 0)

V(BR)EBO

−7.0

−

Vdc

Collector Cutoff Current

(VCB = −12 Vdc, IE = 0)

ICBO

−

−0.1

mAdc

Emitter Cutoff Current

(VEB = −7.0 Vdc)

IEBO

−

−0.1

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 4)

(IC = −10 mA, VCE = −2.0 V)

(IC = −500 mA, VCE = −2.0 V)

(IC = −1.0 A, VCE = −2.0 V)

(IC = −2.0 A, VCE = −2.0 V)

hFE

250

200

150

−

300

−

Collector −Emitter Saturation Voltage (Note 4)

(IC = −0.1 A, IB = −0.010 A) (Note 5)

(IC = −1.0 A, IB = −0.100 A)

(IC = −1.0 A, IB = −0.010 A)

(IC = −2.0 A, IB = −0.200 A)

VCE(sat)

−

−0.008

−0.065

−0.100

−0.130

−0.011

−0.090

−0.120

−0.180

Base −Emitter Saturation Voltage (Note 4)

(IC = −1.0 A, IB = −0.1 A)

VBE(sat)

−

−0.900

Base −Emitter Turn−on Voltage (Note 4)

(IC = −1.0 A, VCE = −2.0 V)

VBE(on)

−

−0.900

Cutoff Frequency

(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)

100

−

MHz

Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)

Cibo

−

350

Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)

Cobo

−

120

SWITCHING CHARACTERISTICS

Delay (VCC = −10 V, IC = 750 mA, IB1 = 15 mA)

−

Rise (VCC = −10 V, IC = 750 mA, IB1 = 15 mA)

−

120

Storage (VCC = −10 V, IC = 750 mA, IB1 = 15 mA)

−

250

Fall (VCC = −10 V, IC = 750 mA, IB1 = 15 mA)

−

130

4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.

5. Guaranteed by design but not tested.

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