PRELIMINARY DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

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NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)

Document No. PU10460EJ01V0DS (1st edition)

Date Published January 2004 CP(K)

Printed in Japan

 NEC Compound Semiconductor Devices 2004

NPN SILICON + SiGe RF TWIN TRANSISTOR

µPA869TD

FEATURES

• 2 different built-in transistors (NESG2046M33, 2SC5800)

Q1: High gain SiGe transistor

fT = 18 GHz TYP.,

S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz

Q2: Low phase distortion transistor suited for OSC applications

fT = 6.5 GHz TYP.,

S21e2 = 5.5 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz

• 6-pin lead-less minimold (M16, 1208 package)

BUILT-IN TRANSISTORS

Q1

Q2

3-pin super lead-less minimold part No.

NESG2046M33

−

3-pin thin-type ultra super minimold part No.

−

2SC5800

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

µPA869TD

50 pcs (Non reel)

• 8 mm wide embossed taping

µPA869TD-T3

10 kpcs/reel

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.