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2SC5745 bảng dữ liệu(PDF) 4 Page - Renesas Technology Corp

tên linh kiện 2SC5745
Giải thích chi tiết về linh kiện  NPN SILICON RF TWIN TRANSISTOR
PDF  30 Pages
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nhà sản xuất  RENESAS [Renesas Technology Corp]
Trang chủ  http://www.renesas.com
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2SC5745 bảng dữ liệu(HTML) 4 Page - Renesas Technology Corp

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Data Sheet PU10098EJ01V0DS
2
µµµµPA855TD
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Q1
Q2
Collector to Base Voltage
VCBO
515
V
Collector to Emitter Voltage
VCEO
35.5
V
Emitter to Base Voltage
VEBO
21.5
V
Collector Current
IC
30
100
mA
90
190
Total Power Dissipation
Ptot
Note
210 in 2 elements
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy PCB
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
(1) Q1
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−−
100
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
−−
100
nA
DC Current Gain
hFE
Note 1
VCE = 1 V, IC = 10 mA
70
−
140
−
Gain Bandwidth Product
fT
VCE = 1 V, IC = 10 mA, f = 2 GHz
10.0
12.0
−
GHz
Insertion Power Gain
S21e2 VCE = 1 V, IC = 10 mA, f = 2 GHz
7.0
9.0
−
dB
Noise Figure
NF
VCE = 1 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt
−
1.5
2.0
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
−
0.4
0.7
pF
(2) Q2
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−−
100
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
−−
100
nA
DC Current Gain
hFE
Note 1
VCE = 1 V, IC = 10 mA
100
−
145
−
Gain Bandwidth Product
fT
VCE = 1 V, IC = 10 mA, f = 2 GHz
4.0
5.5
−
GHz
Insertion Power Gain
S21e2 VCE = 1 V, IC = 10 mA, f = 2 GHz
3.0
4.5
−
dB
Noise Figure
NF
VCE = 1 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt
−
2.0
3.0
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
0.65
0.75
0.85
pF
Notes 1. Pulse measurement: PW
≤ 350
µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded



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