NXP Semiconductors

MF4SAM3x

MIFARE SAM AV3 secure access module

8 Static characteristics

8.1 Measurement conventions

Testing measurements are performed at the contact pads of the device under test. All voltages are defined with

respect to the ground contact pad VSS. All currents flowing into the Smart Card IC are considered positive.

8.2 Levels and currents

Conditions: VDD = 1.62 V to 5.5 V; VSS = 0 V; Tamb = -25 °C to +85 °C, unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIH

HIGH-level input voltage

0.7 VDD

-

VDD + 0.3 V

VIL

LOW-level input voltage

-0.3

-

0.25 VDD V

IIH

HIGH-level input current in

"weak pull-up" input mode

0.7 VDD ≤ VI ≤ VDD;

Test conditions for the maximum

absolute value:

IIH(max): VI = 0.7 VDD, VDD =

VDD(max) of the respective supply

voltage class A, B or C

0

-

-20

μA

IIL

LOW-level input current

0 V ≤ VI ≤ 0.3 VDD;

Test conditions for the maximum

absolute value:

IIL(max): VI = 0 V, VDD = VDD(max)

of the respective supply voltage

class A, B or C

-

-

-50

μA

0.3 VDD < VI ≤ VDD;

Test conditions for the maximum

absolute value:

VI = 0.5 VDD, VDD = VDD(max) of

the respective supply voltage

class A, B or C

[1]

Class A

-

-

-300

μA

Class B

-

-

-250

μA

ITL

HIGH-to-LOW transition

input current (only in

"quasi-bidirectional" mode)

Class C

-

-

-200

μA

II

input current in "weak pull-

up" input mode

0 V ≤ VI ≤ VDD;

Test conditions for the maximum

absolute value:

II(max): VI = 0 V, VDD = VDD(max)

of the respective supply voltage

class A, B or C

0

-

-50

μA

IILIH

leakage input current at

input voltage beyond VDD

in "weak pull-up" input

mode

VDD < VI ≤ VDD + 0.3 V; -25 °C ≤

Tamb ≤ +85 °C;

Test conditions: VI = VDD + 0.3 V;

VDD = VDD(max) of the respective

supply voltage class A, B or C;

Tamb = +85 °C

-

-

20

μA

Table 6. Electrical DC characteristics of Input/Output: IO1, IO2 and IO3

MF4SAM3X_SDS

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Product short data sheet

Rev. 3.1 — 1 July 2023

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