IRFP150VPbF

07/07/04

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

1.1

Case-to-Sink, Flat, Greased Surface

0.24

–––

°C/W

Junction-to-Ambient

–––

40

Thermal Resistance

www.irf.com

1

S

D

G

advanced processing techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient and reliable device for

use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications

where higher power levels preclude the use of TO-220 devices. The TO-247

is similar but superior to the earlier TO-218 packcage because of its isolated

mounting hole.

Description

Absolute Maximum Ratings

Parameter

Max.

Units

46

32

A

Pulsed Drain Current



230

Power Dissipation

140

W

Linear Derating Factor

0.91

W/°C

Gate-to-Source Voltage

± 20

V

Avalanche Current



28

A

Repetitive Avalanche Energy



20

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.8

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

PD - 95515

TO-247AC