BLV57 datasheet(3/24 Pages) PHILIPS

tên linh kiện	BLV57

Giải thích chi tiết về linh kiện	UHF linear push-pull power transistor

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1998 Feb 09

Philips Semiconductors

Product speciﬁcation

UHF linear push-pull power transistor

BLV57

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Note

1. Dissipation of either transistor section should not exceed half rated dissipation.

Collector-emitter voltage

(peak value); VBE =0

vCESM

max.

50 V

open base

VCEO

max.

27 V

Emitter-base voltage (open collector)

VEBO

max.

3,5 V

Collector current per transistor section

d.c. or average

IC; IC(AV)

max.

2 A

(peak value); f

〉 1 MHz

ICM

max.

4 A

Total power dissipation at Tmb =25 °C(1)

Ptot

max.

77 W(1)

R.F. power dissipation (f

〉 1 MHz); Tmb =25 °C(1)

Prf

max.

93 W(1)

Storage temperature

Tstg

−65 to + 150 °C

Operating junction temperature

max.

200

°C

Fig.2 D.C. SOAR.(1)

(1) Second breakdown limit

(independent of temperature).

handbook, halfpage

MGP358

110

102

IC1 + IC2

(A)

VCE (V)

(1)

Tmb = 25 °C

Th = 70 °C

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