1996 Oct 10

13

Philips Semiconductors

Product specification

VHF linear power transistor

BLV33

List of components used in test circuit (see Fig.16).

Notes

1. American Technical Ceramics type 100B or capacitor of same quality.

2. The striplines are on a double Cu-clad printed-circuit board, with epoxy fibre-glass dielectric (

ε

1

COMPONENT

DESCRIPTION

VALUE

DIMENSIONS

CATALOGUE No.

C1, C17

multilayer ceramic chip

capacitor; note 1

680 pF, 500 V

C2

multilayer ceramic chip

capacitor; note 1

39 pF, 500 V

C3, C16

film dielectric trimmer

2 to 18 pF

2222 809 09003

C4

multilayer ceramic chip

capacitor; note 1

43 pF, 500 V

C5

film dielectric trimmer

4 to 40 pF

2222 809 08002

C6, C10

polyester capacitor

330 nF

C7, C13

multilayer ceramic chip

capacitor

680 pF, 50 V

2222 852 13681

C8, C9

multilayer ceramic chip

capacitor; note 1

68 pF, 500 V

placed 2.5 mm from

transistor edge

C11, C12

multilayer ceramic chip

capacitor; note 1

27 pF, 500 V

placed 7 mm from

transistor edge

C14

film dielectric trimmer

5 to 60 pF

2222 809 08003

C15

solid aluminium electrolytic

capacitor

10

µF, 40 V

L1

2 turns of 1.6 mm enamelled

Cu wire

25 nH

int. diameter 4.3 mm

length 3.4 mm

leads 2

× 5mm

L2

4 turns closely wound

1.1 mm enamelled Cu wire

120 nH

int. diameter 6 mm

leads 2

× 5mm

L3

stripline; note 2

30

Ω

6mm

× 48.8 mm

L4

stripline; note 2

48

Ω

3mm

× 27 mm

at 3 mm from

transistor edge

L5

stripline; note 2

30

Ω

6

× 42.9 mm

L6

2 turns of 1.6 mm enamelled

Cu wire

24 nH

int. diameter 4 mm

length 3.4 mm

leads 2

× 5mm

R1, R2

carbon resistor

10

Ω