SCD6C60S datasheet(2/5 Pages) HAOPIN

2 / 5 page

Limiting values in accordance with the Maximum system(IEC 134)

2/5

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HAOPIN MICROELECTRONICS CO.,LTD.

HPM

SCRs

SYMBOL

PARAMETER

CONDITIONS

MIN

Value

UNIT

SYMBOL

CONDITIONS

MIN

RRM

T(RMS)

Repetitive peak

reverse voltage

RMS on-state current

Peak gate current

600

T =25 C unless otherwise stated

Static characteristics

DI/Dt

DRM

RRM

DC gate trigger voltage

Maximum rate-of-rise of

on-state current;

Dc gate trigger current

On-state voltage

Peak off-state forward and

reverse current at V

and V

DRM

RRM

Tc=125

DRM

RRM

UNIT

MAX

TYP

1.6

100

0.5

VD=12V,RL=60

VD=12V dc,RL=60

IGT=150mA with<=0.1

s rise time,

Ta=25

,itm=0.6A,instantaneous value

1.5

200

TSM

I t for fusing

Peak one-cycle forward

surge current

Average gate power dissipation

Peak gate power dissipation

Gate controlled tum-on time;gate pulse=100mA;

minmum width=15

s with rise time=<0.1

Circuit commutated tum-off time

RMS surge (non-repetitive)on-state

current for period of 8.3ms for fusing

60Hz

50Hz

100

0.5

G(AV)

PARAMETER

V =12V; I =0.1A

DGT

Dynamic Characteristics

D/dt

Critical rate of rise of

Off-state voltage

Gate controlled turn-on

Crcuit commutated tum-

off time

time

100

V =67% V

;Tj=125

;

DRM(max)

Exponential wave form;R =100

I =10A;V =V

;

DRM(max)

I=5mA;

Dl /dt=0.2A/

dv /dt=2V/

s;R =1k

DGK

V/ s

V =67% V

;Tj=125

;I =12A

V =24V;dI /dt=10A/

DRM(max)

RTM

SCD6C60S

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