DMHT3006LFJ

Datasheet number: DS40627 Rev. 3 - 2

2 of 7

www.diodes.com

September 2018

© Diodes Incorporated

DMHT3006LFJ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

13

10

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

80

A

Continuous Source-Drain Diode Current (Note 6)

TA = +25°C

IS

2

A

Avalanche Current (Note 7) L = 0.1mH

IAS

23

A

Avalanche Energy (Note 7) L = 0.1mH

EAS

28

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

PD

1.3

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

95

°C/W

Total Power Dissipation (Note 6)

TA = +25°C

PD

2.1

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

60

°C/W

Thermal Resistance, Junction to Case (Note 6)

RθJC

22

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

30

—

—

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current (TJ = +25°C)

IDSS

—

—

1

µA

VDS = 24V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = +20V, VDS = 0V

VGS = -16V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1.0

—

3.0

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

5.8

10

m

Ω

VGS = 10V, ID = 10A

7.8

15

VGS = 4.5V, ID = 8A

Diode Forward Voltage

VSD

—

0.7

1.0

V

VGS = 0V, IS = 2A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

1171

—

pF

VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

421

—

Reverse Transfer Capacitance

Crss

—

63

—

Gate Resistance

Rg

—

1.9

—

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

Qg

—

9.0

—

nC

VDD = 15V, ID = 9A

Total Gate Charge (VGS = 10V)

Qg

—

17

—

Gate-Source Charge

Qgs

—

2.7

—

Gate-Drain Charge

Qgd

—

4.7

—

Turn-On Delay Time

tD(ON)

—

7.4

—

ns

VDD = 15V, VGS = 10V,

Rg = 3Ω, ID = 9A

Turn-On Rise Time

tR

—

54

—

Turn-Off Delay Time

tD(OFF)

—

16

—

Turn-Off Fall Time

tF

—

4.3

—

Reverse Recovery Time

tRR

—

18

—

ns

IF = 1.5A, di/dt = 100A/μs

Reverse Recovery Charge

QRR

—

8.5

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.