IRFE320

2

www.irf.com

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

RthJC

Junction to Case

—

—

9.1

RthJ-PCB

Junction to PC Board

—

—

26"""

Soldered to a copper clad PC board

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

1.8

ISM

Pulse Source Current (Body Diode) ➀

—

—

7.2

VSD

Diode Forward Voltage

—

—

1.4

V

trr

Reverse Recovery Time

—

—

650

nS

Tj = 25°C, IF = 1.8A, di/dt ≤ 100A/µs

QRR

Reverse Recovery Charge

—

—

5.0

µc

VDD ≤ 50V ➃

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

For footnotes refer to the last page

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

400

—

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.37

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

1.8

VGS = 10V, ID = 1.1A➃

Resistance

—

—

2.07

VGS =10V, ID =1.8A ➃

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID =250µA

gfs

Forward Transconductance

1.0

—

—

S ( )

VDS > 15V, IDS =1.1A➃

IDSS

Zero Gate Voltage Drain Current

—

—

2 5

VDS=320V, VGS=0V

—

—

250

VDS =320V

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

—

—

15.5

VGS =10V, ID= 1.8A

Qgs

Gate-to-Source Charge

—

—

2.6

nC

VDS =200V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

8.3

Turn-On Delay Time

—

—

4 0

VDD =200V, ID =1.8A,

t r

Rise Time

—

—

3 5

RG =7.5Ω

Turn-Off Delay Time

—

—

6 0

tf

Fall Time

—

—

3 5

LS + LD

Total Inductance

—

6.1

—

Ciss

Input Capacitance

—

350

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

100

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

4 5

—

nA

nH

ns

µA

Ω

Measured from the center of

drain pad to center of source

pad