IXTP36N30P datasheet(2/5 Pages) IXYS

2 / 5 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA 36N30P IXTP 36N30P

IXTQ 36N30P

IXYS MOSFETs and IGBTs are covered by one or more

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

6,404,065B1 6,162,665

6,534,343

6,583,505

of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B1 6,306,728B1 6,683,344

Symbol

Test Conditions

Characteristic Values

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

DS= 10 V; ID = 0.5 ID25, pulse test

iss

2250

oss

GS = 0 V, VDS = 25 V, f = 1 MHz

370

rss

d(on)

GS = 10 V, VDS = 0.5 VDSS, ID = ID25

d(off)

G = 10 Ω (External)

g(on)

GS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

thJC

0.42 K/W

thCK

(TO-3P)

0.21

K/W

(TO-220)

0.25

K/W

Source-Drain Diode

Characteristic Values

J = 25°C, unless otherwise specified)

Symbol

Test Conditions

Min.

typ.

Max.

GS = 0 V

Repetitive

F = IS, VGS = 0 V,

1.5

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

F = 25 A

250

-di/dt = 100 A/

µs

R = 100 V

2.0

µC

TO-3P (IXTQ) Outline

Pins: 1 - Gate

2 - Drain

TO-220 (IXTA) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

4.06

4.83

.160

.190

2.03

2.79

.080

.110

0.51

0.99

.020

.039

1.14

1.40

.045

.055

0.46

0.74

.018

.029

1.14

1.40

.045

.055

8.64

9.65

.340

.380

7.11

8.13

.280

.320

9.65

10.29

.380

.405

6.86

8.13

.270

.320

2.54

BSC

.100

BSC

14.61

15.88

.575

.625

2.29

2.79

.090

.110

1.02

1.40

.040

.055

1.27

1.78

.050

.070

0.38

.015

0.46

0.74

.018

.029

TO-263 (IXTP) Outline

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