BLF544 datasheet(6/16 Pages) PHILIPS

6 / 16 page

1998 Jan 21

Philips Semiconductors

Product speciﬁcation

UHF power MOS transistor

BLF544

APPLICATION INFORMATION

Th =25 °C; Rth mb-h = 0.4 K/W unless otherwise speciﬁed.

RF performance in a common source class-B circuit.

Ruggedness in class-B operation

The BLF544 is capable of withstanding a full load mismatch corresponding to VSWR = 50 : 1 through all phases under

the following conditions: VDS = 28 V; f = 500 MHz at rated output power.

MODE OF OPERATION

(MHz)

VDS

(V)

IDQ

(mA)

(W)

(dB)

ηD

(%)

CW, class-B

500

>11

typ. 14

>50

typ. 60

CW, class-B

960

typ. 7

typ. 50

CW, class-B

960

typ. 7

typ. 50

Fig.9

Power gain and efficiency as functions of

load power; typical values.

Class-B operation; VDS = 28 V; IDQ =40mA;

ZL = 4.3 + j6.3 Ω; f = 500 MHz.

handbook, halfpage

(dB)

MDA512

PL (W)

ηD

(%)

Fig.10 Load power as a function of input power;

typical values.

Class-B operation; VDS = 28 V; IDQ =40mA;

ZL = 4.3 + j6.3 Ω; f = 500 MHz.

handbook, halfpage

(W)

PIN (W)

MDA513

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