December 1997

2

Philips Semiconductors

Product specification

VHF power MOS transistor

BLF276

FEATURES

• High power gain

• Easy power control

• Good thermal stability

DESCRIPTION

Silicon N-channel enhancement

mode vertical D-MOS transistor

designed for large signal amplifier

applications in the VHF frequency

range. The transistor delivers an

output power of 100 W in class-B

operation at a supply voltage of 50 V.

The transistor is encapsulated in a

6-lead, SOT119 pill-package

envelope, with a ceramic cap.

PINNING - SOT119D3

PIN

DESCRIPTION

1

source

2

source

3

gate

4

drain

5

source

6

source

PIN CONFIGURATION

CAUTION

The device is supplied in an antistatic package. The gate-source input must

be protected against static charge during transport and handling.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided

that the BeO disc is not damaged. All persons who handle, use or dispose of

this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to

the regulations applying at the location of the user. It must never be thrown

out with the general or domestic waste.

Fig.1 Simplified outline and symbol.

page

2

4

6

5

3

1

MSA308

Top view

s

d

g

MBB072

QUICK REFERENCE DATA

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

(%)

CW, class-B

225

50

100

≥ 13

≥ 50

108

50

100

≥ 18

≥ 60