1

FEATURES

• Low figure-of-merit (FOM) Ron x Qg

• Low input capacitance (Ciss)

• Reduced switching and conduction losses

• Ultra low gate charge (Qg)

• Avalanche energy rated (UIS)

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25

Ω, IAS = 4 A.

c. 1.6 mm from case.

d. ISD

≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.

PRODUCT SUMMARY

VDS (V) at TJ max.

700

RDS(on) at 25 °C (

Ω)

VGS = 10 V

0.45

Qg max. (nC)

70

Qgs (nC)

9

Qgd (nC)

16

Configuration

Single

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

700

V

Gate-Source Voltage

VGS

± 30

Continuous Drain Current (TJ = 150 °C)

VGS at 10 V

TC = 25 °C

ID

11

A

TC = 100 °C

8

Pulsed Drain Current a

IDM

28

Linear Derating Factor

1.4

W/°C

Single Pulse Avalanche Energy b

EAS

226

mJ

Maximum Power Dissipation

PD

156

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +150

°C

Drain-Source Voltage Slope

TJ = 125 °C

dV/dt

37

V/ns

Reverse Diode dV/dt d

28

Soldering Recommendations (Peak Temperature) c

for 10 s

300

°C

S

N-Channel MOSFET

G

D

TO-220AB

Top View

GD S

G D S

TO-220 FULLPAK

Top View

TO-247AC

G

D

S

Top View

N-Channel 700V (D-S) Power MOSFET

VBM17R11 / VBMB17R11 / VBP17R11

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