IDTTM/ICSTM DDR and SDRAM Buffer

ICS93718

REV E 02/11/07

ICS93718

DDR and SDRAM Buffer

Absolute Max

Electrical Characteristics - Input/Supply/Common Output Parameters

Recommended Operating Condition

Supply Voltage (VDD & VDD2.5)

-0.5V to 3.6V

Logic Inputs

GND –0.5 V to VDD +0.5 V

Ambient Operating Temperature

0°C to +85°C

Case Temperature

115°C

Storage Temperature

–65°C to +150°C

Stresses above those listed under

Absolute Maximum Ratings may cause permanent damage to the device. These ratings are

stress specifications only and functional operation of the device at these or any other conditions above those listed in the

operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods

may affect product reliability.

SEL_DDR = 0 SDRAM Outputs VDD = 3.3V, TA = 0 - 85°C; (unless otherwise stated)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Input High Current

IIH

VI = VDD or GND

110

µA

Input Low Current

IIL

VI

= V

DD or GND

-100

-20

µA

IDD3.3_2.5

CL = 0pf, 133MHz

200

250

mA

IDD2.5

CL = 0pf, 133MHz

100

200

mA

IDDPD

CL = 0pf, all frequencies

310

mA

Output High Current

IOH

VDD = 3.3V

, V

OUT = 1V

-74

-18

mA

Output Low Current

IOL

VDD = 3.3V

, V

OUT = 1.2V

26

42

mA

VDD = 3.3V,

VOH = -12mA

VDD = 3.3V

IOH= 12mA

Input Capacitance

1

CIN

VI

= GND or V

DD

2pF

1Guaranteed by design, not 100% tested in production.

Operating Supply Current

High-level output voltage VOH

2V

Low-level output voltage

VOL

0.4

0.35

2.95

SEL_DDR=0 SDRAM Outputs VDD=3.3V, TA = 0 - 85°C; (unless otherwise stated)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

VDD3.3_2.5

3.0

3.3

3.6

VDD2.5

2.3

2.5

2.7

Input High Voltage

VIH

SEL_DDR, PD# input

2.0

V

Input Low Voltage

VIL

SEL_DDR, PD# input

0.8

V

Input voltage level

VIN

VDD

V

1Guaranteed by design, not 100% tested in production.

V

Power Supply Voltage