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AM29LV6402ML100R bảng dữ liệu(PDF) 53 Page - SPANSION

tên linh kiện AM29LV6402ML100R
Giải thích chi tiết về linh kiện  128 Megabit (4 M x 32-Bit/8 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O Control
PDF  57 Pages
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January 23, 2006
Am29LV6402M
51
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 doublewords/1–32 words programmed.
4. Effective write buffer specification is based upon a 16-doubleword/32-word write buffer operation.
5. AC Specifications are tested with V
IO=VCC. Please contact the factory for information on using the device with VIO ≠ VCC.
Parameter
Speed Options
JEDEC
Std.
Description
100R
110R
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
100
110
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
ns
tDVEH
tDS
Data Setup Time
Min
45
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
352
µs
Effective Write Buffer Program Operation
(Notes 2, 4)
Per Word
Typ
11
µs
Per Doubleword
Typ
22
µs
Effective Accelerated Write Buffer
Program Operation (Notes 2, 4)
Per Word
Typ
8.8
µs
Per Doubleword
Typ
17.6
µs
Single Doubleword/Word Program
Operation (Note 2)
Word
Typ
100
µs
Doubleword
Typ
100
µs
Accelerated Single Doubleword/Word
Programming Operation (Note 2)
Word
Typ
90
µs
Doubleword
Typ
90
µs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec



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