PMST6428 datasheet(4/7 Pages) NEXPERIA

4 / 7 page

1999 Apr 22

NXP Semiconductors

Product data sheet

NPN general purpose transistors

PMST6428; PMST6429

THERMAL CHARACTERISTICS

Note

Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb ≤ 25 °C unless otherwise specified.

Note

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 30 V

−

IE = 0; VCB = 30 V; Tj = 150 °C

−

μA

IEBO

emitter cut-off current

IC = 0; VEB = 5 V

−

hFE

DC current gain

VCE = 5 V

PMST6428

IC = 0.01 mA

250

−

IC = 0.1 mA

250

650

IC = 1 mA

250

−

IC = 10 mA

250

−

DC current gain

VCE = 5 V

PMST6429

IC = 0.01 mA

500

−

IC = 0.1 mA

500

1250

IC = 1 mA

500

−

IC = 10 mA

500

−

VCEsat

collector-emitter saturation

voltage

IC = 10 mA; IB = 0.5 mA; note 1

−

200

IC = 100 mA; IB = 5 mA; note 1

−

600

VBE

base-emitter voltage

IC = 1 mA; VCE = 5 V

560

660

collector capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz

−

emitter capacitance

IC = ic = 0; VEB = 0.5 V; f = 1 MHz

−

transition frequency

IC = 1 mA; VCE = 5 V; f = 100 MHz

100

700

MHz

PMST6428 bảng dữ liệu(PDF) 4 Page - Nexperia B.V. All rights reserved

PMST6428 bảng dữ liệu(HTML) 4 Page - Nexperia B.V. All rights reserved

Html Pages

1 2 3 4 5 6 7

bảng dữ liệu tải về

Link URL