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IRGP4055DPBF bảng dữ liệu(PDF) 2 Page - International Rectifier |
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IRGP4055DPBF bảng dữ liệu(HTML) 2 Page - International Rectifier |
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2 / 7 page  IRGP4055DPbF 2 www.irf.com Notes: Half sine wave with duty cycle = 0.25, ton=1µsec. Rθ is measured at TJ of approximately 90°C. Pulse width ≤ 400µs; duty cycle ≤ 2%. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVCES Collector-to-Emitter Breakdown Voltage 300 ––– ––– V ∆ΒVCES/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.23 ––– V/°C ––– 1.10 1.30 ––– 1.70 2.10 V ––– 2.35 ––– ––– 1.95 ––– VGE(th) Gate Threshold Voltage 2.6 ––– 5.0 V ∆VGE(th)/∆TJ Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C ICES Collector-to-Emitter Leakage Current ––– 2.0 25 µA ––– 100 ––– IGES Gate-to-Emitter Forward Leakage ––– ––– 100 nA Gate-to-Emitter Reverse Leakage ––– ––– -100 gfe Forward Transconductance ––– 38 ––– S Qg Total Gate Charge ––– 132 ––– nC Qgc Gate-to-Collector Charge ––– 42 ––– td(on) Turn-On delay time — 44 57 IC = 35A, VCC = 180V tr Rise time — 39 55 ns RG = 10Ω, L=250µH, LS= 150nH td(off) Turn-Off delay time — 245 308 TJ = 25°C tf Fall time — 152 198 td(on) Turn-On delay time — 42 — IC = 35A, VCC = 180V tr Rise time — 40 — ns RG = 10Ω, L=250µH, LS= 150nH td(off) Turn-Off delay time — 362 — TJ = 150°C tf Fall time — 309 — tst Shoot Through Blocking Time 100 ––– ––– ns EPULSE Energy per Pulse µJ Ciss Input Capacitance ––– 4280 ––– Coss Output Capacitance ––– 200 ––– pF Crss Reverse Transfer Capacitance ––– 125 ––– LC Internal Collector Inductance ––– 5.0 ––– Between lead, nH 6mm (0.25in.) LE Internal Emitter Inductance ––– 13 ––– from package Diode Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units IF(AV) Average Forward Current ––– ––– 8.0 A IFSM Non Repetitive Peak Surge Current ––– ––– 100 A TJ = 155°C, PW = 6.0ms half sine wave VF Forward Voltage ––– 1.0 1.25 V ––– 0.83 1.0 trr Diode Reverse Recovery Time ––– ––– 35 ns IF = 1.0A, di/dt = -50A/µs, VR = 30V ––– 27 ––– TJ = 25°C IF = 8.0A, VR = 200V, ––– 40 ––– TJ = 125°C di/dt = 200A/µs Qrr Diode Reverse Recovery Charge ––– 30 ––– nC TJ = 25°C IF = 8.0A, VR = 200V, ––– 106 ––– TJ = 125°C di/dt = 200A/µs Irr Peak Reverse Recovery Current ––– 2.2 ––– A TJ = 25°C IF = 8.0A, VR = 200V, ––– 5.3 ––– TJ = 125°C di/dt = 200A/µs Static Collector-to-Emitter Voltage VCE(on) VGE = 15V, ICE = 110A, TJ = 150°C ––– 705 ––– VCE = VGE, ICE = 1mA VCE = 300V, VGE = 0V VCE = 300V, VGE = 0V, TJ = 150°C ––– 915 ––– L = 220nH, C= 0.40µF, VGE = 15V VCC = 240V, RG= 5.1Ω, TJ = 100°C and center of die contact VGE = 30V VGE = -30V ƒ = 1.0MHz, See Fig.13 VCE = 25V, ICE = 35A VCE = 200V, IC = 35A, VGE = 15Ve VCC = 240V, VGE = 15V, RG= 5.1Ω VCC = 240V, RG= 5.1Ω, TJ = 25°C VCE = 30V Conditions VGE = 0V, ICE = 1 mA Reference to 25°C, ICE = 1mA VGE = 15V, ICE = 200A e VGE = 15V, ICE = 35A e VGE = 15V, ICE = 110A e IF = 8A, TJ = 125°C Conditions Tc = 155°C VGE = 0V L = 220nH, C= 0.40µF, VGE = 15V IF = 8A |
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