DMTH10H015SPSQ

Document number: DS39955 Rev. 3 - 2

3 of 9

www.diodes.com

January 2023

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DMTH10H015SPSQ

Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

100

—

—

V

VGS = 0V, ID = 1mA

Zero Gate Voltage Drain Current

IDSS

—

—

1

µA

VDS = 80V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

2

—

4

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

11.3

14.5

m

Ω

VGS = 10V, ID = 20A

—

14.7

19.5

VGS = 6V, ID = 20A

Diode Forward Voltage

VSD

—

0.9

1.3

V

VGS = 0V, IS = 20A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

2343

—

pF

VDS = 50V, VGS = 0V

f = 1MHz

Output Capacitance

Coss

—

487

—

Reverse Transfer Capacitance

Crss

—

26

—

Gate Resistance

RG

—

0.69

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

QG

—

30.1

—

nC



VDD = 50V, ID = 10A,

VGS = 10V

Gate-Source Charge

QGS

—

7.5

—

Gate-Drain Charge

QGD

—

6.5

—

Turn-On Delay Time

tD(ON)

—

9.8

—

ns

VDD = 50V, VGS = 10V,

ID = 10A, RG = 6Ω

Turn-On Rise Time

tR

—

7.8

—

Turn-Off Delay Time

tD(OFF)

—

22.5

—

Turn-Off Fall Time

tF

—

9.6

—

Reverse Recovery Time

tRR

—

43.1

—

ns

IF = 10A, di/dt = 100A/µs

Reverse Recovery Charge

QRR

—

65.1

—

nC

Notes:

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.