DMP6110SFDF

Document number: DS38492 Rev. 3 - 2

3 of 8

www.diodes.com

March 2020

© Diodes Incorporated

DMP6110SFDF

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-60

V

Gate-Source Voltage

VGSS

20

V

Continuous Drain Current (Note 6) VGS = -10V

Steady

State

TA = +25°C

TA = +70°C

ID

-3.5

-2.8

A

t<10s

TA = +25°C

TA = +70°C

ID

-4.2

-3.4

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

-20

A

Continuous Source-Drain Diode Current (Note 6)

TA = +25°C

IS

-2.1

A

Avalanche Current (Note 7) L = 0.1mH

IAS

-19

A

Avalanche Energy (Note 7) L = 0.1mH

EAS

18

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

PD

0.76

W

TA = +70°C

0.47

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

167

°C/W

t<10s

121

Total Power Dissipation (Note 6)

TA = +25°C

PD

1.97

W

TA = +70°C

1.30

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

64

°C/W

t<10s

42

Thermal Resistance, Junction to Case (Note 6)

Steady State

RθJC

8

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

-60

—

—

V

VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

—

-1

µA

VDS = -48V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±16V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

-1

—

-3

V

VDS = VGS, ID = -250µA

Static Drain-Source On-Resistance

RDS(ON)

—

—

110

m

Ω

VGS = -10V, ID = -4.5A

—

130

VGS = -4.5V, ID = -3.5A

Diode Forward Voltage

VSD

—

-0.7

-1.2

V

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

969

—

pF

VDS = -30V, VGS = 0V, f =

1.0MHz

Output Capacitance

Coss

—

58

—

Reverse Transfer Capacitance

Crss

—

44

—

Gate Resistance

RG

—

14

—

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = -4.5V)

QG

—

8.2

—

nC

VDS = -30V, ID = -12A

Total Gate Charge (VGS = -10V)

QG

—

17.2

—

Gate-Source Charge

QGS

—

3.0

—

Gate-Drain Charge

QGD

—

3.1

—

Turn-On Delay Time

tD(ON)

—

4.4

—

ns

VGS = -10V, VDS = -30V, RGEN =

6

Ω, ID = -12A

Turn-On Rise Time

tR

—

23

—

Turn-Off Delay Time

tD(OFF)

—

34

—

Turn-Off Fall Time

tF

—

42

—

Reverse Recovery Time

tRR

—

13.2

—

ns

IS = -12A, di/dt = -100A/μs

Reverse Recovery Charge

QRR

—

6.2

—

nC

IS = -12A, di/dt = -100A/μs

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.