BFQ245 datasheet(2/6 Pages) PHILIPS

2 / 6 page

1996 Sep 04

Philips Semiconductors

Product speciﬁcation

PNP video transistor

BFQ245

APPLICATIONS

• Primarily intended for cascode

output and buffer stages in high

resolution colour monitors.

DESCRIPTION

PNP silicon transistor encapsulated

in a 3-lead plastic SOT128B package.

PINNING

DESCRIPTION

emitter

collector

base

Fig.1 Simplified outline SOT128B.

handbook, halfpage

MGA323

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−100

collector current (DC)

−−100

Ptot

total power dissipation

Tmb =25 °C

−

3.75

transition frequency

IC = −25 mA; VCE = −10 V

−

GHz

Cre

feedback capacitance

IC = 0; VCB = −10 V

1.7

−

junction temperature

−

175

°C

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−100

VCER

collector-emitter voltage

RBE = 100 Ω−

−95

VEBO

emitter-base voltage

open collector

−−3V

collector current (DC)

see Fig.2

−−100

IC(AV)

average collector current

see Fig.2

−−100

Ptot

total power dissipation

Tmb =25 °C; see Fig.3

−

3.75

Tstg

storage temperature

−65

+175

°C

junction temperature

−

175

°C

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