BFG67WSLASHXR datasheet(2/16 Pages) PHILIPS

2 / 16 page

August 1995

Philips Semiconductors

Product speciﬁcation

NPN 8 GHz wideband transistor

BFG67W

BFG67W/X; BFG67W/XR

FEATURES

• High power gain

• Low noise figure

• Gold metallization ensures

excellent reliability.

APPLICATIONS

They are intended for wideband

applications in the GHz range such as

analog satellite television systems

and portable RF communication

equipment.

DESCRIPTION

NPN silicon planar epitaxial

transistors in plastic, 4-pin

dual-emitter SOT343 and SOT343R

packages.

MARKING

PINNING

TYPE NUMBER

CODE

BFG67W

BFG67W/X

BFG67W/XR

DESCRIPTION

BFG67W (see Fig.1)

collector

base

emitter

BFG67W/X (see Fig.1)

collector

emitter

base

emitter

BFG67W/XR (see Fig.2)

collector

emitter

base

emitter

Fig.1 SOT343.

fpage

Top view

MBK523

Fig.2 SOT343R.

alfpage

Top view

MSB842

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

VCBO

collector-base voltage

open emitter

−−

VCEO

collector-emitter voltage

open base

−−

collector current (DC)

−−

Ptot

total power dissipation

up to Ts =85 °C

−−

500

hFE

DC current gain

IC = 15 mA; VCE = 5 V

100

−

Cre

feedback capacitance

IC = 0; VCE = 8 V; f = 1 MHz

−

0.5

−

transition frequency

IC = 15 mA; VCE = 8 V; f = 500 MHz; Tamb =25 °C −

7.5

−

GHz

GUM

maximum unilateral

power gain

IC = 15 mA; VCE = 8 V; f = 1 GHz; Tamb =25 °C

−

15.5

−

noise ﬁgure

s =Γopt; IC = 5 mA; VCE = 8 V; f = 2 GHz

−

2.2

−

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