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KMI15/1 bảng dữ liệu(PDF) 3 Page - NXP Semiconductors |
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KMI15/1 bảng dữ liệu(HTML) 3 Page - NXP Semiconductors |
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3 / 16 page ![]() 1996 Dec 05 3 Philips Semiconductors Preliminary specification Integrated rotational speed sensor KMI15/1 LIMITING VALUES In accordance with Absolute Maximum Rating System (IEC 134). Note 1. With RL = 115 Ω the device is continuously protected against wrong polarity of DC supply voltage (VCC) to GND (see Fig.7). CHARACTERISTICS Tamb =25 °C; VCC = 12 V; d = 2.1 mm; ft = 2 kHz; test circuit: see Fig.7; RL =115 Ω; sensor positioning: see Fig.15; gear wheel: module 2 mm; material 1.0715; unless otherwise specified. Note 1. High rotational speeds of wheels reduce the sensing distance due to eddy current effects (see Fig.17). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC DC supply voltage Tamb = −40 to +85 °C; RL =115 Ω− 16 V Tstg storage temperature −40 +150 °C Tamb ambient operating temperature −40 +85 °C Tsld soldering temperature t ≤ 10 s − 260 °C output short-circuit duration to GND continuous; note 1 SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICC (low) current output signal low see Figs 6 and 8 5.6 7.0 8.4 mA ICC (high) current output signal high see Figs 6 and 8 11.2 14.0 16.8 mA tr output signal rise time CL = 100 pF; see Fig.9; 10 to 90% value − 0.5 −µs tf output signal fall time CL = 100 pF; see Fig.9; 10 to 90% value − 0.7 −µs td switching delay time between stimulation pulse (generated by a coil) and output signal − 1 −µs ft operating tooth frequency for both rotation directions 0 − 25000 Hz d sensing distance see Fig.15 and note 1 0 to 2.5 0 to 2.9 − mm δ duty cycle see Fig.6 30 50 70 % |
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