BFG540SLASHX datasheet(3/16 Pages) PHILIPS

3 / 16 page

2000 May 23

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistor

BFG540; BFG540/X;

BFG540/XR

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−

VCES

collector-emitter voltage

RBE =0

−−

DC collector current

−−

120

Ptot

total power dissipation

Ts ≤ 60 °C; note 1

−−

400

hFE

DC current gain

IC = 40 mA; VCE =8V; Tj =25 °C

100

120

250

Cre

feedback capacitance

IC = 0; VCE = 8 V; f = 1 MHz

−

0.5

−

transition frequency

IC = 40 mA; VCE = 8 V; f = 1 GHz;

Tamb =25 °C

−

GHz

GUM

maximum unilateral power gain

IC = 40 mA; VCE = 8 V; f = 900 MHz;

Tamb =25 °C

−

IC = 40 mA; VCE = 8 V; f = 2 GHz;

Tamb =25 °C

−

insertion power gain

IC = 40 mA; VCE = 8 V; f = 900 MHz;

Tamb =25 °C

−

noise ﬁgure

Γs = Γopt; IC = 10 mA; VCE =8V;

f = 900 MHz; Tamb =25 °C

−

1.3

1.8

s = Γopt; IC = 40 mA; VCE =8V;

f = 900 MHz; Tamb =25 °C

−

1.9

2.4

Γs = Γopt; IC = 10 mA; VCE =8V;

f = 2 GHz; Tamb =25 °C

−

2.1

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCES

collector-emitter voltage

RBE =0

−

VEBO

emitter-base voltage

open collector

−

2.5

DC collector current

−

120

Ptot

total power dissipation

Ts ≤ 60 °C; note 1

−

400

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

Ts ≤ 60 °C; note 1

290

K/W

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