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TSDF1220F bảng dữ liệu(PDF) 1 Page - Vishay Siliconix |
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TSDF1220F bảng dữ liệu(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() TSDF1220F Document Number 85106 Rev. 1.3, 02-May-05 Vishay Semiconductors www.vishay.com 1 2 1 3 Electrostatic sensitive device. Observe precautions for handling. 16867 Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broad- band amplification up to more than 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. . In addition to space savings, the SOT-490 provides a higher level of reliability than other 3-pin packages, such as more resistance to moisture. Due to the short length of its leads the SOT-490 is also reducing pack- age inductances resulting in some better electrical performance. All of these aspects make this device an ideal choice for demanding RF applications Features • Low power applications • Very low noise figure • High transition frequency fT = 12 GHz • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications For low noise applications such as preamplifiers, mix- ers and oscillators in analog and digital TV-systems (e.g., satellite tuners) up to microwave frequencies. Mechanical Data Typ: TSDF1220F Case: SOT-490 Plastic case Weight: approx. 2.5 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Part Marking Package TSDF1220F F2 SOT-490 Parameter Test condition Symbol Value Unit Collector-base voltage VCBO 9V Collector-emitter voltage VCEO 6V Emitter-base voltage VEBO 2V Collector current IC 40 mA Total power dissipation Tamb ≤ 60 °C Ptot 200 mW Junction temperature Tj 150 °C Storage temperature range Tstg - 65 to + 150 °C e3 |
Số phần tương tự - TSDF1220F |
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Mô tả tương tự - TSDF1220F |
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