BF593 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1997 Jul 02

Philips Semiconductors

Product speciﬁcation

NPN high-voltage transistors

BF591; BF593

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.01.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

BF591

−

210

BF593

−

250

VCEO

collector-emitter voltage

open base

BF591

−

170

BF593

−

210

VEBO

emitter-base voltage

open collector

−

collector current (DC)

−

150

ICM

peak collector current

−

300

IBM

peak base current

−

100

Ptot

total power dissipation

Tamb ≤ 55 °C

−

1.3

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient in free air

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =60V

−

IE = 0; VCB =60V; Tj = 140 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−

100

hFE

DC current gain

note 1

IC = 20 mA; VCE =5V

−

IC = 100 mA; VCE =6V

−

IC = 150 mA; VCE =7V

−

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