1

IPT65R080CFD7

Rev.2.0,2022-08-03

Final Data Sheet

1

2

3

4

8

7

6

5

Tab

8

7

6

5

4

3

2

1

Tab

PG-HSOF-8

Drain

Tab

Gate

Pin 1

Source

Pin 3-8

Driver

Source

Pin 2

*1

*1: Internal body diode

MOSFET

650VCoolMOSªCFD7SJPowerDevice

Thelatest650VCoolMOS™CFD7extendsthevoltageclassofferingof

theCFD7familyandisasuccessortothe650VCoolMOS™CFD2.

Resultingfromimprovedswitchingperformanceandexcellentthermal

behavior,650VCooMOS™CFD7offershighestefficiencyinresonant

switchingtopologies,suchasLLCandphase-shift-full-bridge(ZVS).As

partofInfineon’sfastbodydiodeportfolio,thisnewproductseriesblends

alladvantagesofafastswitchingtechnologytogetherwithsuperiorhard

commutationrobustness.TheCoolMOS™CFD7technologymeets

highestefficiencyandreliabilitystandardsandfurthermoresupportshigh

powerdensitysolutions.

Features

•Ultra-fastbodydiode

•650Vbreakdownvoltage

•Best-in-classRDS(on)

•Reducedswitchinglosses

•LowRDS(on)dependencyovertemperature

Benefits

•Excellenthardcommutationruggedness

•Extrasafetymarginfordesignswithincreasedbusvoltage

•Enablingincreasedpowerdensitysolutions

•OutstandinglightloadefficiencyinindustrialSMPSapplications

•ImprovedfullloadefficiencyinindustrialSMPSapplications

Potentialapplications

Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server,

Telecom,EVCharging,Solar

Productvalidation

FullyqualifiedaccordingtoJEDECforIndustrialApplications

Pleasenote:Thesourceandsensesourcepinsarenotexchangeable.

Theirexchangemightleadtomalfunction.Forparalleling4pinMOSFET

devicestheplacementofthegateresistorisgenerallyrecommendedtobe

ontheDriverSourceinsteadoftheGate.

Table1KeyPerformanceParameters

Parameter

Value

Unit

VDS @ Tj,max

700

V

RDS(on),max

80

m

Ω

Qg,typ

50

nC

ID,pulse

107

A

Eoss @ 400V

7.8

µJ

Body diode diF/dt

1300

A/µs

Type/OrderingCode

Package

Marking

RelatedLinks

IPT65R080CFD7

PG-HSOF-8

65R080F7

see Appendix A